WMM036N12HGS Datasheet and Replacement. Cross Reference Search

WMM036N12HGS Datasheet (PDF)

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WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMM036N12HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 120V, I = 188A

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wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

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WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM037N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 170A

9.3. Size:693K way-on
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WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device GSis well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 18

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .