All MOSFET. WMM037N10HGS Datasheet

 

WMM037N10HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM037N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 258.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 86.5 nC
   trⓘ - Rise Time: 29.5 nS
   Cossⓘ - Output Capacitance: 882 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO263

 WMM037N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM037N10HGS Datasheet (PDF)

 ..1. Size:677K  way-on
 wmm037n10hgs.pdf

WMM037N10HGS WMM037N10HGS

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM037N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 170A

 9.1. Size:692K  way-on
 wmm036n12hgs.pdf

WMM037N10HGS WMM037N10HGS

WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMM036N12HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 120V, I = 188A

 9.2. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf

WMM037N10HGS WMM037N10HGS

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

 9.3. Size:693K  way-on
 wmm030n06hg4.pdf

WMM037N10HGS WMM037N10HGS

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device GSis well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 18

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P2804HVG

 

 
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