WMM037N10HGS PDF and Equivalents Search

 

WMM037N10HGS Specs and Replacement

Type Designator: WMM037N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.5 nS

Cossⓘ - Output Capacitance: 882 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO263

WMM037N10HGS substitution

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WMM037N10HGS datasheet

 ..1. Size:677K  way-on
 wmm037n10hgs.pdf pdf_icon

WMM037N10HGS

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM037N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 170A ... See More ⇒

 9.1. Size:692K  way-on
 wmm036n12hgs.pdf pdf_icon

WMM037N10HGS

WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMM036N12HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 120V, I = 188A ... See More ⇒

 9.2. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMM037N10HGS

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

 9.3. Size:693K  way-on
 wmm030n06hg4.pdf pdf_icon

WMM037N10HGS

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G S is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 18... See More ⇒

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Detailed specifications: WMM015N08HGS, WMM020N06HG4, WMM020N10HGS, WMM023N08HGS, WMM028N10HG2, WMM028N10HGS, WMM030N06HG4, WMM036N12HGS, 13N50, WMM040N08HGS, WMM040N15HG2, WMM043N10HGS, WMM048NV6HG4, WMM053N10HGS, WMM053NV8HGS, WMM071N15HG2, WMM07N60C4

Keywords - WMM037N10HGS MOSFET specs

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