WMM043N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM043N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 145 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35.8 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
WMM043N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM043N10HGS Datasheet (PDF)
wmm043n10hgs.pdf
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WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM043N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 145A
wmm040n08hgs.pdf
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WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. STO-263Features V = 80V, I = 180A D
wmm048nv6hg4.pdf
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WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMM048NV6HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 65V, I = 11
wmm040n15hg2.pdf
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WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .