WMN10N70C4 Specs and Replacement

Type Designator: WMN10N70C4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO262

WMN10N70C4 substitution

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WMN10N70C4 datasheet

 ..1. Size:668K  way-on
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WMN10N70C4

WMM10N70C4, WML10N7 WM C4 70C4, MO10N70C WMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM... See More ⇒

 6.1. Size:660K  way-on
 wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf pdf_icon

WMN10N70C4

WML10 WMK10N7 0N70EM, W 70EM, WMM10N70EM WMN10 WMP10N7 0N70EM, W 70EM, WMO10N70EM 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ... See More ⇒

 8.1. Size:1319K  samwin
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WMN10N70C4

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒

 8.2. Size:1328K  samwin
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WMN10N70C4

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio... See More ⇒

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Detailed specifications: WML10N65C4, WMO10N65C4, WMN10N65C4, WMP10N65C4, WMK10N65C4, WMM10N70C4, WML10N70C4, WMO10N70C4, IRF740, WMP10N70C4, WMK10N70C4, WMM115N15HG4, WMM120N04TS, WMM120P06TS, WMM13N50C4, WML13N50C4, WMO13N50C4

Keywords - WMN10N70C4 MOSFET specs

 WMN10N70C4 cross reference

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