WMM115N15HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM115N15HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 268 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO263
WMM115N15HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM115N15HG4 Datasheet (PDF)
wmm115n15hg4.pdf
WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =
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