WMM180N03TS Datasheet and Replacement
Type Designator: WMM180N03TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 405 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
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WMM180N03TS Datasheet (PDF)
wmm180n03ts.pdf

WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM180N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. STO-263Features V = 30V, I = 180A DS DR
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WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NVHL160N120SC1 | MC08N005C | IRLR024 | CED05N8 | CS15N50P | AON6794 | BL10N70-A
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History: NVHL160N120SC1 | MC08N005C | IRLR024 | CED05N8 | CS15N50P | AON6794 | BL10N70-A



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