WMN22N50C4 Specs and Replacement

Type Designator: WMN22N50C4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO262

WMN22N50C4 substitution

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WMN22N50C4 datasheet

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 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMN22N50C4

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Detailed specifications: WMM90R1K5S, WMN90R1K5S, WMK90R1K5S, WML90R1K5S, WMP90R1K5S, WMO90R1K5S, WMM95P06TS, WMMB020N10HG4, IRF530, WMM22N50C4, WMJ22N50C4, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4, WMO048NV6HG4

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