WMN22N50C4 Datasheet and Replacement
Type Designator: WMN22N50C4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO262
WMN22N50C4 substitution
WMN22N50C4 Datasheet (PDF)
wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4
Datasheet: WMM90R1K5S , WMN90R1K5S , WMK90R1K5S , WML90R1K5S , WMP90R1K5S , WMO90R1K5S , WMM95P06TS , WMMB020N10HG4 , AO4407 , WMM22N50C4 , WMJ22N50C4 , WMO22N50C4 , WMK22N50C4 , WML22N50C4 , WMO030N06HG4 , WMO030N06LG4 , WMO048NV6HG4 .
History: IPL65R310E6 | CSD19535KCS
Keywords - WMN22N50C4 MOSFET datasheet
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History: IPL65R310E6 | CSD19535KCS



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