WMO099N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO099N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 67 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59 nC
trⓘ - Rise Time: 28.5 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
Package: TO252
WMO099N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO099N10HGS Datasheet (PDF)
wmo099n10hgs.pdf
WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
wmo099n10lgs.pdf
WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Sis well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
wmo090nv6hg4.pdf
WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. TO-252Features V = 65V, I = 68
wmo09n20dm.pdf
WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET DescriptionWMO09N20DM is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09n20dmh.pdf
WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET DescriptionWMO09N20DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09p10ts.pdf
WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -9A DS DR
wmo09n15ts.pdf
WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 8.6A DS D TO-252R
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
