All MOSFET. WMO120N04TS Datasheet

 

WMO120N04TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO120N04TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 96 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 95 nC
   Rise Time (tr): 30.5 nS
   Drain-Source Capacitance (Cd): 430 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
   Package: TO252

 WMO120N04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO120N04TS Datasheet (PDF)

 ..1. Size:600K  way-on
wmo120n04ts.pdf

WMO120N04TS
WMO120N04TS

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 40V, I = 120A DS DTO-252R

 9.1. Size:983K  way-on
wmo12p06ts.pdf

WMO120N04TS
WMO120N04TS

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -60V, I = -20A DS DR

 9.2. Size:590K  way-on
wmo12p05t1.pdf

WMO120N04TS
WMO120N04TS

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -55V, I = -12A DS DTO-252R

 9.3. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMO120N04TS
WMO120N04TS

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top