WMO18N20T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO18N20T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO252
WMO18N20T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO18N20T2 Datasheet (PDF)
wmo18n20t2.pdf
WMO18N20T2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMO18N20T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 200V, I = 18A DS DTO-252R
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