WMO80P04TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO80P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 81.16 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: TO252
WMO80P04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO80P04TS Datasheet (PDF)
wmo80p04ts.pdf
WMO80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO80P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.DSFeatures GTO-252 V = -40V, I = -80A DS DR
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wmo80n06ts.pdf
WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 60V, I = 80A DS DTO-252R
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wmo80n03t1.pdf
WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 30V, I = 80A DS DR
wmo80n08ts.pdf
WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR
wmm80r720s wmn80r720s wmk80r720s wml80r720s wmp80r720s wmo80r720s.pdf
WMM R720S, WM 0S M80R720S, WMN80R MK80R720WML R720S, WM 0S L80R720S, WMP80R MO80R720 800V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
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