WMQ090N04LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ090N04LG2
Marking Code: 090N04L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.6 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 247 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFN3030-8L
WMQ090N04LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ090N04LG2 Datasheet (PDF)
wmq090n04lg2.pdf
WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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