WMQ25P03T1 Datasheet and Replacement
Type Designator: WMQ25P03T1
Marking Code: Q25P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 20 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 137 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3030-8L
WMQ25P03T1 substitution
WMQ25P03T1 Datasheet (PDF)
wmq25p03t1.pdf

WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -25A DS DR
wmq25p04t1.pdf

WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -40V, I = -25A DS DR
wmq25p06ts.pdf

WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMQ25P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN3030-8L V = -60V, I = -25A DS DR
Datasheet: WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , IRFZ24N , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 .
Keywords - WMQ25P03T1 MOSFET datasheet
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