WMQ25P03T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ25P03T1
Marking Code: Q25P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 137 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3030-8L
WMQ25P03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ25P03T1 Datasheet (PDF)
wmq25p03t1.pdf
WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -25A DS DR
wmq25p04t1.pdf
WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -40V, I = -25A DS DR
wmq25p06ts.pdf
WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMQ25P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN3030-8L V = -60V, I = -25A DS DR
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: FDPF18N50T
History: FDPF18N50T
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918