All MOSFET. WMR050N03LG4 Datasheet

 

WMR050N03LG4 Datasheet and Replacement


   Type Designator: WMR050N03LG4
   Marking Code: 050N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: DFN2020-6L
 

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WMR050N03LG4 Datasheet (PDF)

 ..1. Size:617K  way-on
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WMR050N03LG4

WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDDWMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appli

 9.1. Size:598K  way-on
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WMR050N03LG4

WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR05N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =100V, I = 5A DS DR

 9.2. Size:642K  way-on
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WMR050N03LG4

WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -40V, I = -5A DS DR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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