WMR050N03LG4 Specs and Replacement
Type Designator: WMR050N03LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 475 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: DFN2020-6L
WMR050N03LG4 substitution
- MOSFET ⓘ Cross-Reference Search
WMR050N03LG4 datasheet
wmr050n03lg4.pdf
WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D D WMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G D resistance and yet maintain superior switching performance. This D DFN2020-6L device is well suited for high efficiency fast switching appli... See More ⇒
wmr05n10ts.pdf
WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D WMR05N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. D D Features DFN2020-6L V =100V, I = 5A DS D R ... See More ⇒
wmr05p04ts.pdf
WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WMR05P04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -40V, I = -5A DS D R ... See More ⇒
Detailed specifications: WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1, WMQ60P02TS, WMQ80N03T1, IRF1405, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1, WMR10N03T1, WMR12N03T1
Keywords - WMR050N03LG4 MOSFET specs
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