WMS04P10TS MOSFET Datasheet: P-Ch, 100V, 3.5A. Full specification with pinout and replacement list

WMS04P10TS Specs and Replacement

Type Designator: WMS04P10TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOP8

WMS04P10TS substitution

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WMS04P10TS datasheet

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WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R ... See More ⇒

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wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features ... See More ⇒

9.2. Size:982K way-on
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WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R ... See More ⇒

9.3. Size:750K way-on
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WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 100V, I = 3.5A DS D R ... See More ⇒