WMS05P06T1
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS05P06T1
Marking Code: S05P06
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 22.3
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package: SOP-8L
WMS05P06T1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS05P06T1
Datasheet (PDF)
..1. Size:761K way-on
wms05p06t1.pdf
WMS05P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P06T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -60V, I = -4.5A DS DSOP-8LR
7.1. Size:790K way-on
wms05p04ts.pdf
WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -40V, I = -5A DS DR
8.1. Size:763K way-on
wms05p10ts.pdf
WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P10TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -100V, I = -4.5A DS DR
Datasheet: FMP36-015P
, FMP76-01T
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.