WMS05P06T1 Specs and Replacement
Type Designator: WMS05P06T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22.3 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP8
WMS05P06T1 substitution
- MOSFET ⓘ Cross-Reference Search
WMS05P06T1 datasheet
wms05p04ts.pdf
WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D D WMS05P04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = -40V, I = -5A DS D R ... See More ⇒
wms05p10ts.pdf
WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET Description D D WMS05P10TS uses advanced power trench technology that has been D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = -100V, I = -4.5A DS D R ... See More ⇒
Detailed specifications: WMS02P15TS, WMS032N04LG2, WMS048NV6HG4, WMS048NV6LG4, WMS04N10T1, WMS04N10TS, WMS04P10TS, WMS05P04TS, 20N60, WMS05P10TS, WMS06N10TS, WMS06N15T2, WMS06P04T1, WMS08DH04T1, WMS08DN06TS, WMS08DP03TS, WMS08N06TS
Keywords - WMS05P06T1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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