All MOSFET. WMS05P06T1 Datasheet

 

WMS05P06T1 Datasheet and Replacement


   Type Designator: WMS05P06T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22.3 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOP8
 

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WMS05P06T1 Datasheet (PDF)

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WMS05P06T1

WMS05P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P06T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -60V, I = -4.5A DS DSOP-8LR

 7.1. Size:790K  way-on
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WMS05P06T1

WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -40V, I = -5A DS DR

 8.1. Size:763K  way-on
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WMS05P06T1

WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P10TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -100V, I = -4.5A DS DR

Datasheet: WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , IRF840 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS .

History: WMK26N65C4 | AP01N60H-HF | WML05N100C2 | WMK053NV8HGS | WML14N65C4 | WMK099N10LGS | WSD30L40DN

Keywords - WMS05P06T1 MOSFET datasheet

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