All MOSFET. WMS08P03T1 Datasheet

 

WMS08P03T1 Datasheet and Replacement


   Type Designator: WMS08P03T1
   Marking Code: S08P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8L
 

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WMS08P03T1 Datasheet (PDF)

 ..1. Size:764K  way-on
 wms08p03t1.pdf pdf_icon

WMS08P03T1

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR

 7.1. Size:785K  way-on
 wms08p04ts.pdf pdf_icon

WMS08P03T1

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS08P04TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -40V, I = -8A DS DR

 9.1. Size:764K  way-on
 wms08dp03ts.pdf pdf_icon

WMS08P03T1

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR

 9.2. Size:846K  way-on
 wms08dh04t1.pdf pdf_icon

WMS08P03T1

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR

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Datasheet: WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , IRF640N , WMS08P04TS , WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS .

History: NP100P06PDG | NCE30H29D | IRL3803VSPBF | IRHYK57133CMSE | SIHD4N80E | SIRA18ADP | HSM4313

Keywords - WMS08P03T1 MOSFET datasheet

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