All MOSFET. WMS09DP03TS Datasheet

 

WMS09DP03TS Datasheet and Replacement


   Type Designator: WMS09DP03TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP-8L
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WMS09DP03TS Datasheet (PDF)

 ..1. Size:687K  way-on
 wms09dp03ts.pdf pdf_icon

WMS09DP03TS

WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1yet maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -9A DS DR

 9.1. Size:746K  way-on
 wms090n04lg2.pdf pdf_icon

WMS09DP03TS

WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.2. Size:979K  way-on
 wms090dnv6lg4.pdf pdf_icon

WMS09DP03TS

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L

 9.3. Size:772K  way-on
 wms09p02ts.pdf pdf_icon

WMS09DP03TS

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR

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History: LSF65R570GT | CSD16342Q5A

Keywords - WMS09DP03TS MOSFET datasheet

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