WMS09P06TS MOSFET Datasheet: P-Ch, 60V, 8.5A. Full specification with pinout and replacement list

WMS09P06TS Specs and Replacement

Type Designator: WMS09P06TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

WMS09P06TS substitution

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WMS09P06TS datasheet

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WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L ... See More ⇒