WMS119N10LG2 Specs and Replacement
Type Designator: WMS119N10LG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
WMS119N10LG2 substitution
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WMS119N10LG2 datasheet
Detailed specifications: WMS099N10LGS, WMS09DP03TS, WMS09N06TS, WMS09P02TS, WMS09P06TS, WMS10DH04TS, WMS10DN04TS, WMS10N04TS, IRFP250N, WMS11P02TS, WMS11P04T1, WMS12P03T1, WMS13N03T1, WMS13P04T1, WMS140DNV6LG4, WMS140NV6LG4, WMS14DN03T1
Keywords - WMS119N10LG2 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPA126N10N3G
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