All MOSFET. WMS11P02TS Datasheet

 

WMS11P02TS Datasheet and Replacement


   Type Designator: WMS11P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SOP-8L
 

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WMS11P02TS Datasheet (PDF)

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 wms11p02ts.pdf pdf_icon

WMS11P02TS

WMS11P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -11A DS DR

 7.1. Size:767K  way-on
 wms11p04t1.pdf pdf_icon

WMS11P02TS

WMS11P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -40V, I = -10.5A DS DSOP-8LR

 9.1. Size:506K  way-on
 wms119n10lg2.pdf pdf_icon

WMS11P02TS

WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures

Datasheet: WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , 7N65 , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 .

History: AFP8989 | SSF3N80F | SFF50N20 | HM10N10I | SHD239501 | 2SK2522-01MR

Keywords - WMS11P02TS MOSFET datasheet

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