WMS11P02TS Specs and Replacement
Type Designator: WMS11P02TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOP8
WMS11P02TS substitution
- MOSFET ⓘ Cross-Reference Search
WMS11P02TS datasheet
Detailed specifications: WMS09DP03TS, WMS09N06TS, WMS09P02TS, WMS09P06TS, WMS10DH04TS, WMS10DN04TS, WMS10N04TS, WMS119N10LG2, IRF630, WMS11P04T1, WMS12P03T1, WMS13N03T1, WMS13P04T1, WMS140DNV6LG4, WMS140NV6LG4, WMS14DN03T1, WMS14P03T1
Keywords - WMS11P02TS MOSFET specs
WMS11P02TS cross reference
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WMS11P02TS substitution
WMS11P02TS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: KI4503DY
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