WMS11P02TS Datasheet and Replacement
Type Designator: WMS11P02TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOP-8L
WMS11P02TS substitution
WMS11P02TS Datasheet (PDF)
wms11p02ts.pdf

WMS11P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -11A DS DR
wms11p04t1.pdf

WMS11P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -40V, I = -10.5A DS DSOP-8LR
wms119n10lg2.pdf

WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
Datasheet: WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , 7N65 , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 .
History: PTP16N60 | IRFPC50PBF | SSF12N60F | R8008ANX | P0603BVG | 2N7227U | JSM2622
Keywords - WMS11P02TS MOSFET datasheet
WMS11P02TS cross reference
WMS11P02TS equivalent finder
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WMS11P02TS replacement
History: PTP16N60 | IRFPC50PBF | SSF12N60F | R8008ANX | P0603BVG | 2N7227U | JSM2622



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