All MOSFET. WMS12P03T1 Datasheet

 

WMS12P03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS12P03T1
   Marking Code: S12P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP-8L

 WMS12P03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS12P03T1 Datasheet (PDF)

 ..1. Size:816K  way-on
 wms12p03t1.pdf

WMS12P03T1 WMS12P03T1

WMS12P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS12P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -11.5A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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