WMS12P03T1 Datasheet and Replacement
Type Designator: WMS12P03T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 298 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8L
WMS12P03T1 substitution
WMS12P03T1 Datasheet (PDF)
wms12p03t1.pdf

WMS12P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS12P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -11.5A DS DR
Datasheet: WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , 2N7000 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 .
History: NP180N04TUJ
Keywords - WMS12P03T1 MOSFET datasheet
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History: NP180N04TUJ



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