All MOSFET. WMS13P04T1 Datasheet

 

WMS13P04T1 Datasheet and Replacement


   Type Designator: WMS13P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP-8L
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WMS13P04T1 Datasheet (PDF)

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WMS13P04T1

WMS13P04T1 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = - 40V, I = - 13A DS DR

 9.1. Size:565K  way-on
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WMS13P04T1

WMS13N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 13A DS DR

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STK800 | KNB2710A | STD50N03L-1 | STD4NK60Z | P0770ETF | IXFN340N07 | 2SJ195

Keywords - WMS13P04T1 MOSFET datasheet

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