All MOSFET. WMS13P04T1 Datasheet

 

WMS13P04T1 Datasheet and Replacement


   Type Designator: WMS13P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

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WMS13P04T1 Datasheet (PDF)

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WMS13P04T1

WMS13P04T1 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = - 40V, I = - 13A DS DR

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WMS13P04T1

WMS13N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 13A DS DR

Datasheet: WMS10DH04TS , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , 12N60 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 .

Keywords - WMS13P04T1 MOSFET datasheet

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