IRF9317TR
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9317TR
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 4.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 10.5
nS
Cossⓘ -
Output Capacitance: 410
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
SOP8
IRF9317TR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9317TR
Datasheet (PDF)
..1. Size:2418K slkor
irf9317tr.pdf 
IRF9317TRP-Channel 30 V (D-S) MOSFETDescription This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)
7.1. Size:216K international rectifier
irf9317pbf.pdf
PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor
7.2. Size:219K infineon
irf9317pbf.pdf
PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor
8.1. Size:232K international rectifier
irf9310pbf-1.pdf
IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo
8.2. Size:277K international rectifier
irf9310pbf.pdf
PD - 97437AIRF9310PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 4.6 m(@VGS = 10V)ID -20 A(@TA = 25C)SO-8Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesLow RDSon ( 4.6m) Lower Conduction Lossesresults in Industry-Standard SO8 Package Multi-Vendor CompatibilityRoHS
8.3. Size:232K infineon
irf9310pbf-1.pdf
IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo
8.4. Size:812K cn vbsemi
irf9310trpbf-9.pdf
IRF9310TRPBF&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2
Datasheet: WPB4002
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