SL002P02K Specs and Replacement
Type Designator: SL002P02K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT723
SL002P02K substitution
- MOSFET ⓘ Cross-Reference Search
SL002P02K datasheet
Detailed specifications: WMT04P10TS, WMT05N10T1, WMT05N12TS, WMT07N03T1, WMT07N06TS, WMT07N10TS, WMU080N10HG2, IRF9317TR, STP80NF70, SL05N06A, SL05N06Z, SL05N10A, SL1002B, SL100N03R, SL10N06A, SL10N10A, SL10P04S
Keywords - SL002P02K MOSFET specs
SL002P02K cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI9410BDY-T1
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