All MOSFET. SL10N06A Datasheet

 

SL10N06A Datasheet and Replacement


   Type Designator: SL10N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT223
 

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SL10N06A Datasheet (PDF)

 ..1. Size:1762K  slkor
 sl10n06a.pdf pdf_icon

SL10N06A

SL10N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 10AD R ( at V =10V)DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Power m

 9.1. Size:1595K  slkor
 sl10n65f.pdf pdf_icon

SL10N06A

SL10N65FN-CHANNEL MOSFET MAIN CHARACTERISTICS10AID650VVDSS0.94R V =10VDS(ON) GS35nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate

 9.2. Size:904K  slkor
 sl10n10a.pdf pdf_icon

SL10N06A

SL10N10AN-Channel Enhancement Mode Field Effect TransistorProduct SummaryD100 VVDS95 mRDS(ON)@10V,MAXD2S110 AIDD1SDGFEATURESSOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Absolute Maximum Ratings (TA=25unless otherwise noted)Symbol Parameter Rating UnitCommon Ra

Datasheet: WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , IRFP250 , SL10N10A , SL10P04S , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T .

History: 2SK579S | RZL025P01TR | 2SK1191

Keywords - SL10N06A MOSFET datasheet

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