SL2302M Specs and Replacement
Type Designator: SL2302M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ -
Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT723
- MOSFET ⓘ Cross-Reference Search
SL2302M datasheet
..1. Size:2205K slkor
sl2302m.pdf 
SL2302M 20V N-Channel MOSFET Circuit diagram Product Summary V R I (BR)DSS DS(on)MAX D 110m @4.5V 20V 150m @2.5V 1.2A Feature Package Surface Mount Package N-Channel Switch with Low R (on) DS Operated at Low Logic Level Gate Drive ESD Protected Application SOT-723 Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portab... See More ⇒
8.1. Size:1387K slkor
sl2302s.pdf 
SL2302S SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 3 ... See More ⇒
8.2. Size:485K slkor
sl2302.pdf 
SL2302 N-Channel Power MOSFET General Features VDS = 20V,ID = 2.8 A RDS(ON) ... See More ⇒
9.1. Size:73K intersil
fsl230.pdf 
FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒
9.2. Size:410K slkor
sl2309.pdf 
SL2309 P-Channel Power MOSFET General Features VDS =-60V,ID =-1.6A RDS(ON) ... See More ⇒
9.3. Size:3256K slkor
sl2308.pdf 
SL2308 60V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE 60V/1 . 8 A, RDS(ON) =1 35m (typ.)@VGS=1 0V The SL2308 is the N-Channel logic enhancement =1 54m (typ.)@VGS=4.5V 60V/ 1 ..5 A, R DS(ON) mode power field effect transistor is produced using Super high design for extremely low RDS(ON) high cell density advanced trench technology.. Exc... See More ⇒
9.4. Size:483K slkor
sl2300.pdf 
SL2300 N-Channel Power MOSFET D General Features VDS = 20V,ID = 4.2A G RDS(ON) ... See More ⇒
9.5. Size:503K slkor
sl2306.pdf 
SL2306 N-Channel Power MOSFET MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BV 20 V DSS Gate- Source Voltage V +10 V GS Drain Current (continuous) I 4 A D Drain Current (pulsed) I 15 A DM Total Device Dissipation PD 1200 mW TA=25 Junction T 150 J Solder Temperature/Solder Time T/t 260/10 /... See More ⇒
9.6. Size:441K slkor
sl2305.pdf 
SL2305 P-Channel Power MOSFET D General Features G VDS = -20V,ID = -4.1A RDS(ON) ... See More ⇒
9.7. Size:509K slkor
sl2301.pdf 
SL2301 P-Channel Power MOSFET D General Features VDS = -20V,ID = -2.8A G RDS(ON) ... See More ⇒
9.8. Size:1411K slkor
sl2301s.pdf 
SL2301S SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 3 ... See More ⇒
9.9. Size:1022K slkor
sl2307.pdf 
SL2307 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX Equivalent Circuit 60m @-10 V -4.1A -30V 87m @-4.5V SOT-23 General Description The SL2307 uses adva nced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN D Maximum ratings (Ta=25 unless otherwi... See More ⇒
9.10. Size:600K slkor
sl2304.pdf 
SL2304 N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 60m @10V 30 V 3.3A 75m @4.5V FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain... See More ⇒
9.11. Size:616K slkor
sl2309a.pdf 
SL2309A P-Channel 60-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID -60V 165m @ 10V -2.0A Equivalent Circuit FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter 1.GATE 2.SOURCE 3.DRAIN Absolute Maximum Ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 V ... See More ⇒
Detailed specifications: SL18N20, SL18N50F, SL2016, SL2026, SL20N03, SL20N10, SL2102, SL2192, STP65NF06, SL2309, SL2309A, SL2314, SL2318, SL2319A, SL2328A, SL2333A, SL2343
Keywords - SL2302M MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.