All MOSFET. SL2328A Datasheet

 

SL2328A Datasheet and Replacement


   Type Designator: SL2328A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.56 nC
   tr ⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT23
 

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SL2328A Datasheet (PDF)

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SL2328A

SL2328AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100V DS I 2.0A D R ( at V =10V) 310 mohm DS(ON) GS R ( at V =4.5V) 350 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) MSL LEVEL1Applications DC-DC Co

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