SL8820 Datasheet and Replacement
Type Designator: SL8820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT23-6L
SL8820 Datasheet (PDF)
sl8820.pdf

SL8820SL8820 Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.014 @ 4.5V20V6.0A0.018 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management ABSOLUTE MAXIMUM RATINGS (Ta=25
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SSPL50N30H | AP2301EN | HSM3006 | SSF4607D
Keywords - SL8820 MOSFET datasheet
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History: SSPL50N30H | AP2301EN | HSM3006 | SSF4607D



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