All MOSFET. SL8N100H Datasheet

 

SL8N100H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL8N100H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO262

 SL8N100H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL8N100H Datasheet (PDF)

 ..1. Size:4070K  slkor
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf

SL8N100H SL8N100H

SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu

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