SL8N100H Datasheet and Replacement
Type Designator: SL8N100H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO262
SL8N100H substitution
SL8N100H Datasheet (PDF)
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf

SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu
Datasheet: SL5N50D , SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F , 5N60 , SL8N100K , SL8N100T , SL90N03R , SL90N20P , SL90P03G , SL9435A , SL9926A , SL9945 .
History: NCE65TF099D | SRC60R068BS | TK62N60W5 | APT5018BFLL | NCE6005AR | NCE01P03S | HCF70R600
Keywords - SL8N100H MOSFET datasheet
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History: NCE65TF099D | SRC60R068BS | TK62N60W5 | APT5018BFLL | NCE6005AR | NCE01P03S | HCF70R600



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