SL8N100K Datasheet and Replacement
Type Designator: SL8N100K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO263
SL8N100K substitution
SL8N100K Datasheet (PDF)
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf

SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu
Datasheet: SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F , SL8N100H , AO3400 , SL8N100T , SL90N03R , SL90N20P , SL90P03G , SL9435A , SL9926A , SL9945 , SL9968 .
History: RFP8P05 | PTA04N100 | STF45N65M5 | IXTQ74N20P | INK0001AM1 | PSMN1R9-40PL | SWD5N65K
Keywords - SL8N100K MOSFET datasheet
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History: RFP8P05 | PTA04N100 | STF45N65M5 | IXTQ74N20P | INK0001AM1 | PSMN1R9-40PL | SWD5N65K



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