SL8N100K Specs and Replacement
Type Designator: SL8N100K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO263
SL8N100K substitution
- MOSFET ⓘ Cross-Reference Search
SL8N100K datasheet
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf
SL8N100 Series Features Low gate charge Low C (typ 9pF) rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS product Applications High frequency switching mode power supply Electronic ballast UPS Absolute Ratings (Tc=25 ) Parameter Symbol Value Unit Drain-Source Voltage V 1000 V DSS 8 A I T=25 D Drain Current-continu... See More ⇒
Detailed specifications: SL607B, SL6244, SL6800C, SL80N03, SL8820, SL8N100, SL8N100F, SL8N100H, AO3401, SL8N100T, SL90N03R, SL90N20P, SL90P03G, SL9435A, SL9926A, SL9945, SL9968
Keywords - SL8N100K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: EMB20P03G
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