FDS4465 Specs and Replacement
Type Designator: FDS4465
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ -
Output Capacitance: 1497 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO-8
- MOSFET ⓘ Cross-Reference Search
FDS4465 datasheet
..1. Size:137K fairchild semi
fds4465.pdf 
March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m... See More ⇒
..2. Size:400K fairchild semi
fds4465 f085.pdf
February 2010 tm FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(... See More ⇒
..3. Size:264K onsemi
fds4465.pdf
FDS4465 P-Channel 1.8V Specified POWERTRENCH MOSFET Description This P-Channel 1.8 V specified MOSFET is a rugged gate version www.onsemi.com of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V 8 V). VDSS RDS(on) MAX ID MAX Features -20 V 8.5 mW @ -4.5 V -13.5 A 13.5... See More ⇒
0.1. Size:811K cn vbsemi
fds4465-nl-9.pdf
FDS4465-NL&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7... See More ⇒
9.1. Size:110K fairchild semi
fds4410.pdf
April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O... See More ⇒
9.2. Size:112K fairchild semi
fds4410a.pdf
May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair- RDS(ON) = 20 m @ VGS = 4.5 V child Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Fast switching speed ... See More ⇒
9.3. Size:144K fairchild semi
fds4480.pdf
May 2013 FDS4480 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (29 nC) switching PWM controllers. It has been optimized for low gate char... See More ⇒
9.4. Size:146K fairchild semi
fds4470.pdf
December 2006 FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 40 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (45 nC) switching PWM controllers. It has been optimized for low gate charge... See More ⇒
9.5. Size:69K fairchild semi
fds4488.pdf
December 2001 FDS4488 30V N-Channel PowerTrench MOSFET General Description Features This N MOSFET is produced using Fairchild -Channel 7.9 A, 30 V. R = 22 m @ V = 10 V DS(ON) GS Semiconductor s advanced PowerTrench process that R = 30 m @ V = 4.5 V DS(ON) GS has been especially tailored to minimize on-state resistance and yet maintain superior switching ... See More ⇒
9.6. Size:64K fairchild semi
fds4435.pdf
October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave ... See More ⇒
9.7. Size:296K fairchild semi
fds4435bz f085.pdf
July 2009 FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi... See More ⇒
9.8. Size:172K fairchild semi
fds4435a.pdf
October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg... See More ⇒
9.9. Size:225K fairchild semi
fds4435bz.pdf
April 2009 FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi... See More ⇒
9.10. Size:160K onsemi
fds4480.pdf
FDS4480 40V N-Channel PowerTrench MOSFET Features General Description 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V This N-Channel MOSFET has been designed Low gate charge (29 nC) specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controller... See More ⇒
9.11. Size:258K onsemi
fds4470.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.12. Size:342K onsemi
fds4435bz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.13. Size:2378K cn vbsemi
fds4435-nl.pdf
FDS4435-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D... See More ⇒
9.14. Size:812K cn vbsemi
fds4450.pdf
FDS4450 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL In... See More ⇒
9.15. Size:819K cn vbsemi
fds4435a.pdf
FDS4435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D ... See More ⇒
9.16. Size:1468K cn vbsemi
fds4435bz.pdf
FDS4435BZ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D ... See More ⇒
Detailed specifications: STF06N20, FDS3890, FDS3992, STE339S, FDS4141, FDS4141F085, FDS4435BZ, FDS4435BZF085, 5N60, FDS4465F085, FDS4470, FDS4488, STD12L01, FDS4501H, STB458D, STB440S, FDS4559
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