SSB60R099S2E MOSFET. Datasheet pdf. Equivalent

   Type Designator: SSB60R099S2E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO263

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