All MOSFET. SSB65R190S2 Datasheet

 

SSB65R190S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSB65R190S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.5 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 68 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
   Package: TO263

 SSB65R190S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSB65R190S2 Datasheet (PDF)

 ..1. Size:1013K  cn super semi
ssp65r190s2 ssb65r190s2 ssw65r190s2.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R190S2Rev. 1.7Aug. 2022www.supersemi.com.cnSSP65R190S2/SSB65R190S2/SSW65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 4.1. Size:1726K  cn super semi
ssf65r190s ssp65r190s ssb65r190s.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power TransistorSS*65R190SRev. 1.4Oct. 2023www.supersemi.com.cnSSF65R190S/SSP65R190S/SSB65R190S650V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance me

 8.1. Size:1043K  cn super semi
ssf65r600s2 ssp65r600s2 ssb65r600s2.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R600S2Rev. 1.3Jun. 2023www.supersemi.com.cnSSF65R600S2/SSP65R600S2/SSB65R600S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 8.2. Size:787K  cn super semi
ssb65r360s2e ssi65r360s2e.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSB65R360S2E/SSI65R360S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva

 8.3. Size:827K  cn super semi
ssb65r360s2 ssi65r360s2.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2Rev. 1.4Dec. 2023www.supersemi.com.cnSSB65R360S2/SSI65R360S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance

 8.4. Size:921K  cn super semi
ssf65r090s2 ssp65r090s2 ssb65r090s2.pdf

SSB65R190S2 SSB65R190S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R090S2Rev. 1.2May. 2022www.supersemi.com.cnSSF65R090S2/SSP65R090S2/SSB65R090S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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