All MOSFET. SSB80R160S2 Datasheet

 

SSB80R160S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSB80R160S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57.5 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO263

 SSB80R160S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSB80R160S2 Datasheet (PDF)

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