All MOSFET. STB438S Datasheet

 

STB438S Datasheet and Replacement


   Type Designator: STB438S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 248.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

 STB438S substitution

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STB438S Datasheet (PDF)

 ..1. Size:262K  samhop
stb438s stp438s.pdf pdf_icon

STB438S

GreenProductSTB/P438SaS mHop Microelectronics C orp.Ver1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A10 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD

 8.1. Size:256K  samhop
stb438a stp438a.pdf pdf_icon

STB438S

GreenProductSTB/P438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8.5 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 9.1. Size:252K  samhop
stb434s stp434s.pdf pdf_icon

STB438S

GreenProductSTB/P434SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.2 @ VGS=10VTO-220 and TO-263 Package.60A40V11.5 @ VGS=4.5VDGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-220S(TA=25C

 9.2. Size:237K  samhop
stb432s stp432s.pdf pdf_icon

STB438S

STB/P432SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD-PAK) TO-220(TC=25

Datasheet: FDS4465F085 , FDS4470 , FDS4488 , STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , MMIS60R580P , FDS4559F085 , STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C .

Keywords - STB438S MOSFET datasheet

 STB438S cross reference
 STB438S equivalent finder
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