SSI65R360S2E Datasheet and Replacement
Type Designator: SSI65R360S2E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 33 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO262
SSI65R360S2E substitution
SSI65R360S2E Datasheet (PDF)
ssb65r360s2e ssi65r360s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSB65R360S2E/SSI65R360S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
ssb65r360s2 ssi65r360s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2Rev. 1.4Dec. 2023www.supersemi.com.cnSSB65R360S2/SSI65R360S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssi65r190s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SSI65R190S2Rev. 1.0Mar. 2022www.supersemi.com.cnSSI65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
Datasheet: SSF90R240S2 , SSF90R240SFD , SSF90R260S , SSF90R420S2 , SSF90R650S2 , SSF90R900S2 , SSI60R190S2E , SSI65R190S2 , AO3400 , SSL60R099SFD , SSL60R190SFD , SSL65R070S2E , SSN60R099SFD , SSN65R065SFD3 , SSN65R190S2 , SSN65R1K2S2E , SSN65R360S2 .
History: 2SK3642-ZK
Keywords - SSI65R360S2E MOSFET datasheet
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History: 2SK3642-ZK
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