SSP60R075SFD2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP60R075SFD2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 236 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 41 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 78 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: TO220
SSP60R075SFD2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP60R075SFD2 Datasheet (PDF)
ssf60r075sfd2 ssp60r075sfd2.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R099SFDRev. 1.2May. 2022www.supersemi.com.cnSSF60R099SFD/SSP60R099SFD/SSW60R099SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha
ssf60r099s2e ssp60r099s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R099S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSF60R099S2E/SSP60R099S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
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