SSP65R1K2S2E MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP65R1K2S2E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
SSP65R1K2S2E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP65R1K2S2E Datasheet (PDF)
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