FDS4897AC Specs and Replacement
Type Designator: FDS4897AC
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO-8
FDS4897AC substitution
- MOSFET ⓘ Cross-Reference Search
FDS4897AC datasheet
fds4897ac.pdf
October 2008 FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel 40 V, 6.1 A, 26 m P-Channel -40 V, -5.2 A, 39 m Features General Description Q1 N-Channel These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process Max rDS(on) = 26 m at VGS = 10 V, ID = 6.1 A that has been especially tailored to minimize on-sta... See More ⇒
fds4897ac.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fds4897a.pdf
FDS4897A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS ... See More ⇒
fds4897c.pdf
November 2005 FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 6.2A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V o... See More ⇒
Detailed specifications: STB440S, FDS4559, STB438S, FDS4559F085, STB438A, FDS4672A, FDS4675F085, FDS4685, IRFB31N20D, STB434S, FDS4897C, STB432S, FDS4935A, FDS4935BZ, FDS5351, FDS5670, FDS5672
Keywords - FDS4897AC MOSFET specs
FDS4897AC cross reference
FDS4897AC equivalent finder
FDS4897AC pdf lookup
FDS4897AC substitution
FDS4897AC replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sa1302 datasheet | mpsa13 transistor equivalent | кт817г характеристики | 2sc1972 | 2n5088 transistor equivalent | 2n5884 | bc640 | 2sc756
