SST70R600S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SST70R600S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11.8 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 36 pF
Maximum Drain-Source On-State Resistance (Rds): 0.62 Ohm
Package: TO252
SST70R600S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SST70R600S2 Datasheet (PDF)
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