STB432S MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

STB432S Specs and Replacement

Type Designator: STB432S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO263

STB432S substitution

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STB432S datasheet

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Green Product STB/P434S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-220 and TO-263 Package. 60A 40V 11.5 @ VGS=4.5V D G STB SERIES STP SERIES TO-263(DD-PAK) TO-220 S (TA=25 C ... See More ⇒

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Green Product STB/P438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8.5 @ VGS=10V TO-220 & TO-263 package. 40V 60A 11 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263... See More ⇒

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Green Product STB/P438S a S mHop Microelectronics C orp. Ver1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 9 @ VGS=10V TO-220 & TO-263 package. 40V 60A 10 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263(DD... See More ⇒

Detailed specifications: FDS4559F085, STB438A, FDS4672A, FDS4675F085, FDS4685, FDS4897AC, STB434S, FDS4897C, 7N60, FDS4935A, FDS4935BZ, FDS5351, FDS5670, FDS5672, FDS6294, STB416D, FDS6298