All MOSFET. FDS4935A Datasheet

 

FDS4935A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS4935A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8

 FDS4935A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS4935A Datasheet (PDF)

 ..1. Size:113K  fairchild semi
 fds4935a.pdf

FDS4935A FDS4935A

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran

 ..2. Size:1504K  cn vbsemi
 fds4935a.pdf

FDS4935A FDS4935A

FDS4935Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1

 7.1. Size:158K  fairchild semi
 fds4935bz.pdf

FDS4935A FDS4935A

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 7.2. Size:154K  onsemi
 fds4935bz.pdf

FDS4935A FDS4935A

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 7.3. Size:850K  cn vbsemi
 fds4935bz-nl-38.pdf

FDS4935A FDS4935A

FDS4935BZ-NL&-38www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

Datasheet: STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , IRF730 , FDS4935BZ , FDS5351 , FDS5670 , FDS5672 , FDS6294 , STB416D , FDS6298 , STB31L01 .

 

 
Back to Top