SSW80R180S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSW80R180S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
Package: TO247
SSW80R180S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSW80R180S2 Datasheet (PDF)
ssb80r180s2 ssw80r180s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R180S2Rev. 1.1Sep. 2023www.supersemi.com.cnSSB80R180S2/SSW80R180S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssw80r130s.pdf
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ssb80r160s2 ssw80r160s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R160S2Rev. 1.2Dec. 2022www.supersemi.com.cnSSB80R160S2/SSW80R160S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssb80r160sfd ssw80r160sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen- With Fast-RecoverySS*80R160SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSB80R160SFD/SSW80R160SFD800V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-E
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