SSZ65R022SFD3 Datasheet and Replacement
Type Designator: SSZ65R022SFD3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO247-4L
SSZ65R022SFD3 substitution
SSZ65R022SFD3 Datasheet (PDF)
ssz65r022sfd3.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R022SFD3Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R022SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
ssz65r041sfd2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R041SFD2Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R041SFD2650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
Datasheet: SSW80R240SFD , SSW80R380S2 , SSW85R105SFD , SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , RU6888R , SSZ65R041SFD2 , SWB015R03VLT , SWB020R03VLT , SWB030R04VT , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T .
Keywords - SSZ65R022SFD3 MOSFET datasheet
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