SWB051R08ES MOSFET Datasheet: N-Ch, 80V, 120A. Full specification with pinout and replacement list

SWB051R08ES Specs and Replacement

Type Designator: SWB051R08ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 889 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm

Package: TO263

SWB051R08ES substitution

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SWB051R08ES datasheet

..1. Size:662K samwin
swb051r08es swp051r08es.pdf pdf_icon

SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS 80V TO-263 TO-220 ID 120A High ruggedness Low RDS(ON) (Typ 5.1m )@VGS=10V RDS(ON) 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte... See More ⇒

9.1. Size:841K samwin
swp050r95e8s swb050r95e8s.pdf pdf_icon

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra... See More ⇒

9.2. Size:828K samwin
swp056r68e7t swb056r68e7t.pdf pdf_icon

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

9.3. Size:833K samwin
swp058r06e7t swb058r06e7t.pdf pdf_icon

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒