SWB055R68E7T PDF and Equivalents Search

 

SWB055R68E7T Specs and Replacement

Type Designator: SWB055R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 171 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 313 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

SWB055R68E7T substitution

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SWB055R68E7T datasheet

 ..1. Size:816K  samwin
 swp055r68e7t swb055r68e7t.pdf pdf_icon

SWB055R68E7T

SW055R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf pdf_icon

SWB055R68E7T

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra... See More ⇒

 9.2. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf pdf_icon

SWB055R68E7T

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

 9.3. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWB055R68E7T

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒

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Detailed specifications: SWB031R06ET, SWB036R10E8S, SWB042R10ES, SWB046R08E8T, SWB046R08E9T, SWB046R68E8T, SWB050R95E8S, SWB051R08ES, IRF1405, SWB056R68E7T, SWB058R06E7T, SWB058R65E7T, SWB060R65E7T, SWB060R68E7T, SWB062R08E8T, SWB062R68E7T, SWB065R68E7T

Keywords - SWB055R68E7T MOSFET specs

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