SWB062R68E7T PDF and Equivalents Search

 

SWB062R68E7T Specs and Replacement

Type Designator: SWB062R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO263

SWB062R68E7T substitution

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SWB062R68E7T datasheet

 ..1. Size:772K  samwin
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB062R68E7T

SW062R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.2m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 6.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 ..2. Size:772K  cn super semi
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB062R68E7T

SW062R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.2m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 6.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 7.1. Size:804K  samwin
 swp062r08e8t swb062r08e8t.pdf pdf_icon

SWB062R68E7T

SW062R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 125A Low RDS(ON) (Typ 5.9m )@VGS=10V RDS(ON) 5.9m Low Gate Charge (Typ 137nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3... See More ⇒

 9.1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB062R68E7T

SW068R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 6.8m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So... See More ⇒

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Detailed specifications: SWB051R08ES, SWB055R68E7T, SWB056R68E7T, SWB058R06E7T, SWB058R65E7T, SWB060R65E7T, SWB060R68E7T, SWB062R08E8T, IRFB7545, SWB065R68E7T, SWB068R08ET, SWB068R68E7T, SWB072R06ET, SWB072R08ET, SWB075R08E7T, SWB076R68E7T, SWB078R08ET

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