All MOSFET. SWB062R68E7T Datasheet

 

SWB062R68E7T Datasheet and Replacement


   Type Designator: SWB062R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO263
 

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SWB062R68E7T Datasheet (PDF)

 ..1. Size:772K  samwin
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB062R68E7T

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 ..2. Size:772K  cn super semi
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB062R68E7T

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 7.1. Size:804K  samwin
 swp062r08e8t swb062r08e8t.pdf pdf_icon

SWB062R68E7T

SW062R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 125A Low RDS(ON) (Typ 5.9m)@VGS=10VRDS(ON) : 5.9m Low Gate Charge (Typ 137nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

 9.1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB062R68E7T

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

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Datasheet: SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , SWB058R65E7T , SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , IRF520 , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET , SWB072R08ET , SWB075R08E7T , SWB076R68E7T , SWB078R08ET .

History: NCE0103M | WMJ9N90D1B | KRF7703 | KRF7604 | WMN80R480S

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