All MOSFET. SWB065R68E7T Datasheet

 

SWB065R68E7T Datasheet and Replacement


   Type Designator: SWB065R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
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SWB065R68E7T Datasheet (PDF)

 ..1. Size:768K  samwin
 swp065r68e7t swb065r68e7t.pdf pdf_icon

SWB065R68E7T

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 68V High ruggedness Low RDS(ON) (Typ 6.3m)@VGS=10V ID : 100A Low Gate Charge (Typ 75nC) RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1

 9.1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB065R68E7T

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

 9.2. Size:772K  samwin
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB065R68E7T

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.3. Size:813K  samwin
 swp060r65e7t swb060r65e7t.pdf pdf_icon

SWB065R68E7T

SW060R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

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History: IRFB4233PBF | DMNH10H028SCT | WML11N80M3 | SI4920DY-T1 | FQP12N60C | NTHL040N120SC1 | IRLS4030

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