All MOSFET. SWB075R08E7T Datasheet

 

SWB075R08E7T Datasheet and Replacement


   Type Designator: SWB075R08E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

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SWB075R08E7T Datasheet (PDF)

 ..1. Size:821K  samwin
 swp075r08e7t swb075r08e7t.pdf pdf_icon

SWB075R08E7T

SW075R08E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 8m)@VGS=10V ID : 90A Low Gate Charge (Typ 95nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source

 6.1. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWB075R08E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 6.2. Size:738K  samwin
 sw075r06et swb075r06et swp075r06et.pdf pdf_icon

SWB075R08E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB075R08E7T

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

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Datasheet: SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET , SWB072R08ET , HY1906P , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET , SWB10N65K2 .

History: SM2363PSA

Keywords - SWB075R08E7T MOSFET datasheet

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